News

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Nanjing Wencai Industrial Intelligent Research Institute Co., Ltd. recently obtained a patent titled "A Structure for ESD Protection Circuit of Silicon Gate MOS Integrated Circuit." This news marks a ...
Find out how a digital technique performs multiplication on two bitstreams and avoids the cost of the analog multiplier.