But it seems Taiwanese megfab TSMC is determined to crank out new silicon regardless. The latest reports claim TSMC's ...
By contrast, TSMC's N2 manufacturing technology shrinks HD SRAM bit cell size to around 0.0175 µm^2, enabling SRAM density of 38 Mb/mm^2. Both 18A and N2 rely on gate-all-around (GAA) transistors ...
MoSys 1T-SRAM Macros Now Proven in Multiple Versions of TSMC'S Standard and Triple-Oxide 0.13-Micron ... The single transistor bit cell used in 1T-SRAM technology results in the technology achieving ...
Intel’s 5nm production is targeted for early 2023, sources said, meaning its traditional 2-year process cadence is extending to roughly 2.5 to 3 years. For now, Intel plans to extend the finFET to 7nm ...