IEEE

Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall

Abstract: It is well known that inclined sidewall scattering structures can improve the light extraction efficiency (LEE) of micro deep ultraviolet (DUV) light-emitting diodes (LEDs). However, ...
IEEE

Numerical Modeling for 250 nm DUV LEDs With Discrete p-type Functional Layers to Manage Both Carrier and Photon Transport

Abstract: Deep-ultraviolet light-emitting diodes (DUV LEDs) are encountering low external quantum efficiency (EQE) and light output power (LOP) due to the strong optical absorption to DUV light and ...
Digi Times

Huawei patent reveals DUV method to replicate 2nm-class chipmaking without EUV

A newly released filing from China's National Intellectual Property Administration (CNIPA) shows Huawei submitted a patent in June 2022 outlining a method to achieve 2nm-class metal line patterning ...
scmp.com

Huawei’s 2022 patent details novel technique to make 2-nm-class chips without EUV tool

Huawei Technologies’ three-year-old patent for advanced patterning comparable with 2-nanometre grade technology without extreme ultraviolet (EUV) lithography tools has intensified speculation about a ...
Hosted on MSN

ASML is becoming the new pick-and-shovel stock for the AI era

ASML has a monopoly on a critical technology used in semiconductor manufacturing. Next-generation AI chips depend on manufacturing processes that use ASML equipment. Nvidia's next-generation Rubin GPU ...